SZ ADE Electronics Co., Ltd
Honest and trustworthy, hand in hand, customer trust is the life of ADE.
Add to Cart
TPH2R306NH1,LQ N-Channel 60 V 136A 800mW 170W 8-SOP Advance Surface Mount
N-Channel 60 V 136A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)
Features of TPH2R306NH1,LQ
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 30 V
Power Dissipation (Max) 800mW (Ta), 170W (Tc)
Specifications of TPH2R306NH1,LQ
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Product | TPH2R306NH1,LQ |
| FET Type | N-Channel |
| Package | Tape & Reel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 136A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta), 170W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5.75) |
| Package / Case | 8-PowerTDFN |
Environmental & Export Classifications
| ATTRIBUTE | DESCRIPTION |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
