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FDN358P Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23
FDN358P P-Channel 30 V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Features of FDN358P
–1.5 A, –30 V. RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (4 nC typical)
• High performance trench technology for extremely low RDS(ON) .
• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
Product Attributes of FDN358P
| Product | FDN358P |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDN358 |
Environmental & Export Classifications of FDN358P
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
