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DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

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City:shenzhen
Province/State:guangdong
Country/Region:china
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DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

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Brand Name :original
Model Number :DBL1010HB-100M-R
Certification :original
Place of Origin :original
MOQ :1
Price :negotiation
Payment Terms :T/T
Supply Ability :100,000
Delivery Time :1-3working days
Packaging Details :carton box
Diode Configuration :1 Pair Common Cathode
Technology :Schottky
Voltage - DC Reverse (Vr) (Max) :170 V
Current - Average Rectified (Io) (per Diode) :8A
Voltage - Forward (Vf) (Max) @ If :920 mV @ 8 A
Speed :Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr :15 µA @ 170 V
Operating Temperature - Junction :175°C (Max)
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DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

Unless otherwise specified, Vcc=10V, f=1KHz, Rg=600, RL=10K. Ta=25°C

Specifications of DBL1010HB-100M-R

(Unless otherwise specified, Vcc=10V, f=1KHz, Rg=600, RL=10K. Ta=25°C)

Characteristics symbol Test circuit Test Conditions mine type maximum unit
Quiescent Current ICCO 1 - 5.5 8.5 mA
Open loop voltage gain GVO 1 Cf=100μF, Rf=0 - 100 - dB
Equivalent input VOM 2

THD 0.5%,

NAB equalization

2 2.8 Vrms
noise voltage VNI 2 Rg=2.2kΩ BPF15HZ-30kHz - 1 2.5 µVrms
input resistance RIN 2 Vo=1Vrms - 100 -
channel separation CHSEP 2 f=10kHz, Rg 2.2kΩ
Vo=1Vrms
- 70 - dB
Ripple rejection R.R. 2 f=100Hz, VIN=1Vrms
CB connectionless
- 50 - dB
Muting ratio M.R. 2 Vg=1V, OdB 1 Vrms. 80 - dB

Features of DBL1010HB-100M-R

* High Voltage Gain: Gvo 100dB (Typ) at f=1kHz
* Excellent channel separation and high ripple
rejection: CHSEP. 70dB (Typ)
R.R.=50dB(Typ.)
* Low Noise: VNI = 1.0μVrms (Typ)
At Rg 2.2k.Ω = 15Hz-30kHz
* Muting circuit built-in: 2V≧V9≧0.9V
* Wide operating supply voltage range: Vcc = 7-18V.

Applications of DBL1010HB-100M-R

* Car or home stereo use.
* DBL 1010 is 8 SIP, Pin9 (Function: Muteing) cut.

DBL1010HB-100M-R Integrated Circuit Chip 7-18V 1KHZ Low Noise

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